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Autori: Ristic Goran S

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Naslov Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method (Article)
Autori Pejovic Momcilo M Ristic Goran S  
Info PHYSICS OF PLASMAS, (2002), vol. 9 br. 1, str. 364-370
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments (Article)
Autori Jaksic Aleksandar B Pejovic Momcilo M Ristic Goran S  
Info APPLIED PHYSICS LETTERS, (2000), vol. 77 br. 25, str. 4220-4222
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method (Article)
Autori Pejovic Momcilo M Ristic Goran S  
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2000), vol. 33 br. 21, str. 2786-2790
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs (Article)
Autori Jaksic Aleksandar B Pejovic Momcilo M Ristic Goran S  
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 659-666
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov New experimental evidence of latent interface-trap buildup in power VDMOSFETs (Article)
Autori Jaksic Aleksandar B Ristic Goran S  Pejovic Momcilo M 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 580-586
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Nitrogen-filled tube as a sensor of ionizing radiation (Article)
Autori Pejovic Momcilo M Ristic Goran S  
Info REVIEW OF SCIENTIFIC INSTRUMENTS, (2000), vol. 71 br. 6, str. 2377-2379
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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Naslov Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors (Article)
Autori Ristic Goran S  Pejovic Momcilo M Jaksic Aleksandar B 
Info JOURNAL OF APPLIED PHYSICS, (2000), vol. 87 br. 7, str. 3468-3477
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
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